Modern problems of radio electronics

Organizing committee

Chairman:

• A. I. Gromyko — Prof., Dr. Tech. Sci., Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk).

Co-chairman:

• G. S. Patrin — Prof., Dr. Phys.-Math. Sci., Director of the Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk).

Vice-chairman, Scientific secretary:

• A. A. Levitskiy — Assoc. Prof., Cand. Phys.-Math. Sci., Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk).

Members of the Organizing Committee:

• R. G. Galeev — Dr. Tech. Sci., General Director of JSC «NPP „Radiosvyaz“» (Krasnoyarsk);

• V. I. Gotovko — Deputy Director for Science of JSC «TsKB „Geofizika“» (Krasnoyarsk);

• Yu. G. Vigonskiy — First Deputy General Director/ First Deputy General Designer of JSC «„Information Satellite Systems“ Reshetnev Company» (Zheleznogorsk);

• A. V. Romulov — General Director of JSC «KB „Iskra“» (Krasnoyarsk);

• Yu. P. Salomatov — Prof., Cand. Tech. Sci., Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk).

Program Committee

Chairman:

• G. S. Patrin — Prof., Dr. Phys.-Math. Sci., Director of the Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk).

Vice-chairman:

• V. N. Bondarenko — Prof., Dr. Tech. Sci., Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk).

Members of the Program Committee:

• B. A. Belyaev — Prof., Dr. Tech. Sci., Institute of Physics of the Siberian Branch of the RAS (Krasnoyarsk);

• S. A. Gamkrelidze — Prof., Dr. Tech. Sci., Director, Institute of Ultra-High Frequency Semiconductor Electronics of the RAS (Moscow);

• N. V. Volkov — Prof., Dr. Phys.-Math. Sci., Director, Federal Research Centre of the Siberian Branch of the RAS (Krasnoyarsk);

• A. G. Vostretsov — Prof., Dr. Tech. Sci., NSTU (Novosibirsk);

• A. V. Grebennikov — Assoc., Cand. Tech. Sci., Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk);

• V. B. Kashkin — Prof., Dr. Tech. Sci., Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk);

• D. I. Lekhovitsky — Prof., Dr. Tech. Sci., Kharkov National University of Radio Electronics (Kharkov);

• P. P. Maltsev — Prof., Dr. Tech. Sci., research supervisor, Institute of Ultra-High Frequency Semiconductor Electronics of the RAS (Moscow);

• A. V. Muratov — Prof., Dr. Tech. Sci., VSTU (Voronezh);

• V. N. Ushakov — Prof., Dr. Tech. Sci., SPb ETU «LETI» (St. Petersburg);

• D. Yu. Chernikov — Assoc. Prof., Cand. Tech. Sci., Institute of Engineering Physics and Radioelectronics of SibFU (Krasnoyarsk);

• G. Ya. Shaidurov — Prof., Dr. Tech. Sci., Military Engineering Institute of SibFU (Krasnoyarsk);

• A. A. Shelupanov — Prof., Dr. Tech. Sci., Rector, TUSUR (Tomsk).